发明名称 SUBSTRATE PROCESSOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate processor and a method for manufacturing a semiconductor device which can prevent reaction products from sticking on the ceiling of an outer tube and particles from sticking on a substrate, perform uniform substrate processing of high quality by smoothly changing the direction of a glas flow, and manufacture the semiconductor device. SOLUTION: In the substrate processor, gas flowing up in an inner tube 3A has its flow direction changed at the upper end of the inner tube 3A, flows down between the inner tube 3A and an outer tube 2A, and is discharged. The processor is provided with an inner tube cap 11 covering the part above the inner tube 3A. A gas flow passage is formed between the upper end of the inner tube 3A and the inner tube cap 11, and the center part of the inner tube cap 11 is projected to the upstream side of the gas flow.
申请公布号 JP2002343782(A) 申请公布日期 2002.11.29
申请号 JP20010143880 申请日期 2001.05.14
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TANIYAMA TOMOSHI;TOMEZUKA KOJI
分类号 C23C16/44;C23C16/455;H01L21/31;(IPC1-7):H01L21/31 主分类号 C23C16/44
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