METHOD OF MANUFACTURING FIELD EMISSION ELECTRON SOURCE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing for a field emission type elec tron source capable of improving reliability and an electron emission characteris tic. SOLUTION: A porous polycrystalline silicon layer 4 is formed, by forming a polycrystalline silicon layer 3 which is a lamellar semiconductor layer comprising polycrystalline silicon on a conductive layer 12 composing a part of a conductive substrate and then providing pores on a part of the polycrystalline silicon layer 3 by anodizing. A strong field drift layer 6' is formed by electrochemically oxidizing the porous polycrystalline silicon layer 4. A defect in the strong field drift layer 6' is passivated, by applying a hydrogen radical on a surface of the strong field drift layer 6'. A surface electrode 7 is formed on a strong field drift layer 6, after irradiation of hydrogen radicals.