发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a polarization characteristic is prevented from degrading. SOLUTION: A semiconductor device is provided where at least a ferroelectric film or both a ferroelectric film (33) and a surface protecting film 62 are provided on a substrate 1, with the surface protecting film 62 made of acrylic resin. |
申请公布号 |
JP2002343941(A) |
申请公布日期 |
2002.11.29 |
申请号 |
JP20010141991 |
申请日期 |
2001.05.11 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
UMEDA KAZUO;MATSUNAGA KEIICHI |
分类号 |
H01L27/105;H01L21/02;H01L21/8242;H01L21/8246;H01L23/29;H01L23/556;H01L27/108;H01L27/115 |
主分类号 |
H01L27/105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|