发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a polarization characteristic is prevented from degrading. SOLUTION: A semiconductor device is provided where at least a ferroelectric film or both a ferroelectric film (33) and a surface protecting film 62 are provided on a substrate 1, with the surface protecting film 62 made of acrylic resin.
申请公布号 JP2002343941(A) 申请公布日期 2002.11.29
申请号 JP20010141991 申请日期 2001.05.11
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 UMEDA KAZUO;MATSUNAGA KEIICHI
分类号 H01L27/105;H01L21/02;H01L21/8242;H01L21/8246;H01L23/29;H01L23/556;H01L27/108;H01L27/115 主分类号 H01L27/105
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