| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, when fabricating a diaphragm by etching a sacrifice layer interposed between anti-etching layers having etching holes, the etching holes cannot be easily sealed. SOLUTION: A first anti-etching layer 8 having a first opening is deposited on the surface of a semiconductor substrate 2, an etching layer is deposited on the first anti-etching layer 8, and then second anti-etching layers 12 and 16 having second openings are deposited on the etching layer. The etching layer is etched from the second opening to form a space 28. In the first opening 18, the surface of the semiconductor substrate 2 is oxidized to form an oxide layer 30 expanded toward the second anti-etching layer. A sealing film 32 is deposited that covers the surface of the second anti-etching layer and is extended into the space from the second opening through the expanded oxide layer 30. A diaphragm type semiconductor device having superior airtightness can be manufactured only by semiconductor processing technologies, and an extremely small absolute pressure detector can be manufactured.
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