发明名称 Substrate processing apparatus and substrate processing method
摘要 A heating processing chamber has a plate for holding a wafer and a heater heating the plate portion. The plate portion is composed of a plurality of divided plates separated from each other, and thereby the plate is hard to break even through a drastic change in temperature, thus making it possible to increase the durability of the plate.
申请公布号 US6644964(B2) 申请公布日期 2003.11.11
申请号 US20010883198 申请日期 2001.06.19
申请人 TOKYO ELECTRON LIMITED 发明人 SHIRAKAWA EIICHI;TAKEI TOSHICHIKA
分类号 H01L21/00;(IPC1-7):F27D5/00 主分类号 H01L21/00
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