发明名称 |
Substrate processing apparatus and substrate processing method |
摘要 |
A heating processing chamber has a plate for holding a wafer and a heater heating the plate portion. The plate portion is composed of a plurality of divided plates separated from each other, and thereby the plate is hard to break even through a drastic change in temperature, thus making it possible to increase the durability of the plate.
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申请公布号 |
US6644964(B2) |
申请公布日期 |
2003.11.11 |
申请号 |
US20010883198 |
申请日期 |
2001.06.19 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SHIRAKAWA EIICHI;TAKEI TOSHICHIKA |
分类号 |
H01L21/00;(IPC1-7):F27D5/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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