EVALUATING METHOD FOR SOI WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for evaluating crystal quality of an SOI wafer in which the crystal lattice of an SOI layer is equal to a substrate or similar to it. SOLUTION: Related to the method for evaluating an SOI wafer 1 where an SOI layer 14 is provided on a substrate 10, an element different from that which mainly constitutes the substrate 10 and the SOI layer 14 is diffused in the SOI layer 14 or the substrate, so that the crystal lattice of the SOI layer 14 is different from that of the substrate 10.