| 摘要 |
PURPOSE: A plasma processing apparatus is provided to be capable of simplifying the structure of the apparatus, forming highly effective plasma and obtaining a satisfactory vertical etching property without involving a problem concerning interference. CONSTITUTION: A plasma processing apparatus is provided with a vacuum chamber(21), which comprises a plasma generating section(22) in the upper portion and a substrate mounting electrode section(23). The plasma generating section(22) comprises a cylindrical dielectric wall(24). In the substrate mounting electrode section(23), an exhaust port(25) is provided and connected to an appropriate evacuate system. Three magnetic coils(26,27,28) which constitute magnetic field generating part for forming a magnetic neutral loop(29) in the vacuum chamber(21), are provided outside the dielectric wall(24). These magnetic coils form the magnetic neutral loop(29) in the plasma generating section(22) located in the upper portion of the vacuum chamber(21). In the lower section of the vacuum chamber(21), a substrate mounting electrode(30) is provided with an insulating part(31) interposed. The substrate mounting electrode(30) is connected through a blocking capacitor(32) to a radio frequency power supply(33) that applies an RF bias to the substrate mounting electrode(30).
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