| 摘要 |
The semiconductor diodes are diode configured vertical metal oxide semiconductor field effect devices formed using semiconductor pedestals (304 ) and having one diode terminal (324) as the common connection between the gat es (318) and drains (312) of the vertical metal oxide semiconductor field effec t devices, and one diode terminal (330) as the common connection with the sources (314) of the vertical metal oxide semiconductor field effect devices . Methods of manufacturing the vertical metal oxide seminconductor field effec t devices are also disclosed.
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