发明名称 |
A METHOD AND APPARATUS FOR ETCHING METAL LAYERS ON SUBSTRATES |
摘要 |
Method and apparatus for etching a metal layer disposed on a substrate, such as a photomask, are provided. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising (i) one or more hydrogen containing fluorocarbons, (ii) an oxygen containing gas, (iii) a chlorine containing gas, and optionally, (iv) an inert gas into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch exposed portions of the metal layer disposed on the substrate. |
申请公布号 |
WO0196955(A3) |
申请公布日期 |
2002.11.28 |
申请号 |
WO2001US19282 |
申请日期 |
2001.06.15 |
申请人 |
APPLIED MATERIALS, INC.;STOEHR, BRIGGITTE;WELCH, MICHAEL;BUIE, MELISSA, J. |
发明人 |
STOEHR, BRIGGITTE;WELCH, MICHAEL;BUIE, MELISSA, J. |
分类号 |
C23F4/00;G03F1/80;H01L21/3213 |
主分类号 |
C23F4/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|