| 摘要 |
First of all, a semiconductor substrate with a memory array and a periphery region thereon is provided, wherein the memory array and the periphery region have a conducted layer, individually. Then an oxide-nitride-oxide layer is formed on the conducted layer. Afterward, forming a photoresist layer on the oxide layer and defining the photoresist layer of the periphery region is completed. The oxide layer and the conducted layer of the periphery region are etched by way of a dry etching process that uses the photoresist layer as an etching mask. A protected layer of the polymer will be formed on the etched sidewalls, so as to keep the etched profile. A wet etching process having a ultra dilite hydrofluoric acid (UDHF) or a mixed-acid solution (APM) is then performed to strip the protected layer of the polymer, so as to avoid any oxide loss.
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