发明名称 SEMICONDUCTOR DEVICE SEPARATION USING A PATTERNED LASER PROJECTION
摘要 <heading lvl="0">Abstract of Disclosure</heading> A method for separating a semiconductor wafer into several thousand devices or die by laser ablation. Semiconductor wafers are initially pre-processed to create multiple devices, such as blue LEDs, on the wafers. The wafers are then mounted with tape coated with a generally high level adhesive. The mounted wafer is then placed on a vacuum chuck (which is itself positioned on a computer controlled positioning table) to hold it in place during the cutting process. The cutting surface is then covered with a protective layer to prevent contamination from the effluent resulting from the actual cutting process. A laser beam is generated and passed through optical elements and masks to create a pattern, such as a line or multiple lines. The patterned laser projection is directed at the wafer at a substantially normal angle and applied to the wafer until at least a partial cut is achieved through it. A mechanical separation process completes the separation when only a partial cut is achieved by the patterned laser projection. The die are then transferred to a grip ring for further processing.
申请公布号 US2002177288(A1) 申请公布日期 2002.11.28
申请号 US20020114099 申请日期 2002.04.02
申请人 BROWN MICHAEL G.;ELIASHEVICH IVAN;KARLICEK ROBERT F.;NERING JAMES E.;GOTTFRIED MARK 发明人 BROWN MICHAEL G.;ELIASHEVICH IVAN;KARLICEK ROBERT F.;NERING JAMES E.;GOTTFRIED MARK
分类号 B23K26/073;B23K26/40;H01L21/301;H01L21/302;H01L21/304;H01L21/46;H01L21/78;H01L33/00;(IPC1-7):H01L21/301 主分类号 B23K26/073
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