发明名称 FLUORESCENCE INTENSITY INTENSIFYING CHIP
摘要 PROBLEM TO BE SOLVED: To provide an inexpensive fluorescence intensity intensifying chip having wide versatility and excellent corrosion resistance by using inexpensive SiO2 having wide versatility and excellent corrosion resistance as a dielectric. SOLUTION: In this fluorescence intensity intensifying chip capable of intensifying the intensity of fluorescence generated from a photo-excited phosphor by piling a metal, the dielectric and the phosphor on a glass substrate, SiO2 having the film thickness of 330 nm or less is used as the dielectric, and Ag or Al is used as the metal, respectively.
申请公布号 JP2002340802(A) 申请公布日期 2002.11.27
申请号 JP20020033813 申请日期 2002.02.12
申请人 YOKOGAWA ELECTRIC CORP;SENTAN KAGAKU GIJUTSU INCUBATION CENTER:KK 发明人 AKIMOTO TAKAHISA;TANAAMI TAKEO;IKEBUKURO KAZUNORI;YANO KAZUYOSHI;KARUBE MASAO
分类号 G01N21/64;G02B1/10;(IPC1-7):G01N21/64 主分类号 G01N21/64
代理机构 代理人
主权项
地址