发明名称 |
FLUORESCENCE INTENSITY INTENSIFYING CHIP |
摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive fluorescence intensity intensifying chip having wide versatility and excellent corrosion resistance by using inexpensive SiO2 having wide versatility and excellent corrosion resistance as a dielectric. SOLUTION: In this fluorescence intensity intensifying chip capable of intensifying the intensity of fluorescence generated from a photo-excited phosphor by piling a metal, the dielectric and the phosphor on a glass substrate, SiO2 having the film thickness of 330 nm or less is used as the dielectric, and Ag or Al is used as the metal, respectively.
|
申请公布号 |
JP2002340802(A) |
申请公布日期 |
2002.11.27 |
申请号 |
JP20020033813 |
申请日期 |
2002.02.12 |
申请人 |
YOKOGAWA ELECTRIC CORP;SENTAN KAGAKU GIJUTSU INCUBATION CENTER:KK |
发明人 |
AKIMOTO TAKAHISA;TANAAMI TAKEO;IKEBUKURO KAZUNORI;YANO KAZUYOSHI;KARUBE MASAO |
分类号 |
G01N21/64;G02B1/10;(IPC1-7):G01N21/64 |
主分类号 |
G01N21/64 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|