发明名称 METHOD FOR MEASURING TILT DIFFERENCE OF PLATEN IN ION IMPLANT SYSTEM AND APPARATUS FOR THE SAME
摘要 PURPOSE: A method for measuring tilt difference of platen in an ion implant system and an apparatus for the same are provided to measure tilt difference of a platen in an ion implant system. CONSTITUTION: The ion implant system comprises a guide plate and a measurement unit. A contact part(20) is contacted with a part for measuring a distance to the lower surface. The contact part(20) comprises a main body(22) attached on the upper surface. A contact tip(24) comprises a supporter(26) to move horizontally to the main body(22).
申请公布号 KR20020088141(A) 申请公布日期 2002.11.27
申请号 KR20010027068 申请日期 2001.05.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHAE, SEUNG WON;HUH, BYEONG DO
分类号 H01L21/265;(IPC1-7):H01L21/265 主分类号 H01L21/265
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