发明名称 |
METHOD FOR MEASURING TILT DIFFERENCE OF PLATEN IN ION IMPLANT SYSTEM AND APPARATUS FOR THE SAME |
摘要 |
PURPOSE: A method for measuring tilt difference of platen in an ion implant system and an apparatus for the same are provided to measure tilt difference of a platen in an ion implant system. CONSTITUTION: The ion implant system comprises a guide plate and a measurement unit. A contact part(20) is contacted with a part for measuring a distance to the lower surface. The contact part(20) comprises a main body(22) attached on the upper surface. A contact tip(24) comprises a supporter(26) to move horizontally to the main body(22).
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申请公布号 |
KR20020088141(A) |
申请公布日期 |
2002.11.27 |
申请号 |
KR20010027068 |
申请日期 |
2001.05.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHAE, SEUNG WON;HUH, BYEONG DO |
分类号 |
H01L21/265;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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