Semiconductor device having a base

摘要

The device has a carrier, at least one semiconducting component (1) mounted on the carrier and a multilayer metallisation (21-24) between the component and the carrier. A first layer of aluminium, gold or gold alloy is applied to the surface of the semiconducting component. A second metal layer of titanium is applied to the first metal layer. A third metal layer of nickel is applied to the second metal layer and a fourth metal layer of a binary or ternary gold-germanium-alloy is applied to the third metal layer. The semiconducting component can be a PNP or NPN transistor with a first metal layer of gold or gold-arsenic alloy respectively.