发明名称 ORGANIC SEMICONDUCTOR DEVICES WITH SHORT CHANNELS
摘要 PURPOSE: Organic semiconductor devices with short channels are provided to improve operating characteristics of organic FETs, because organic FETs usually have characteristics that are much inferior to those of inorganic FETs. Two characteristics that usually have worse values in organic FETs than in an inorganic FETs are the mobility of the active channel and the ON/OFF ratio for the drain current. CONSTITUTION: An organic field-effect-transistor(OFET)(10) forms a step-like structure on a conductive substrate(12). The step-like structure includes a dielectric layer(14) that covers a step on the substrate(12). The substrate(12) and dielectric layer(14) form a gate structure for the OFET(10). Exemplary substrates(12) include organic and inorganic conductors. Exemplary dielectric layers(14) include inorganic and organic layers. The step-like structure includes a horizontal region(16) covered by a stack-like channel structure. From the horizontal region(16) out, the stack-order of the channel-structure is dielectric layer(14), gold source electrode(18), active channel layer(20), and gold drain electrode(22). The active channel layer(20) includes one or more layers of aligned organic molecules that are aligned. The conductivity of the active channel layer(20) responds to voltages applied to adjacent gate electrode(22) in a manner similar to that of conduction channels of conventional FETs.
申请公布号 KR20020088356(A) 申请公布日期 2002.11.27
申请号 KR20020025817 申请日期 2002.05.10
申请人 LUCENT TECHNOLOGIES INC 发明人 BAO ZHENAN;ROGERS JOHN A.;SCHON JAN HENDRIK
分类号 H01L21/8236;H01L21/336;H01L27/088;H01L27/28;H01L29/78;H01L29/786;H01L51/00;H01L51/05;H01L51/30;H01L51/40;(IPC1-7):H01L29/78 主分类号 H01L21/8236
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