| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a langasite-type crystal thin film, by which the crystal thin film having good crystal orientation similar to that of a single crystal can be produced in a short time and at a good yield. SOLUTION: The method of producing the langasite-type crystal thin film includes a process (step S1) for obtaining mixed powder of La3 Ta0.5 Ga5.5 O14 by mixing lanthanum oxide, tantalum oxide and gallium oxide in the stoichiometric compositional ratio of the langasite-type crystal, a process (step S3) for heating the mixed powder to a temperature higher than the melting point so as to melt and cooling the resulting melt to obtain a crystal, a process (step S5) for pulverizing the crystal, a process (step S7) for forming the resulting powder and firing the formed body to produce a target, a process (step S9) for forming a thin film on a sapphire substrate by RF sputtering the target and a process (step S11) for subjecting the thin film to a heat treatment. |
