| 摘要 |
PROBLEM TO BE SOLVED: To improve the throughput of a system and a method for charged particle beam exposure, by preventing the excessive exposure of a resist to light in reducing the number of moving times of a stage at the time of performing alignment, and at the same time, to improve the alignment accuracy of the system and the method. SOLUTION: In an electron beam exposure method, the position of a chip is calculated based on the position of an alignment mark 12 put on a wafer 6, and a vernier pattern is exposed to an electron beam, based on the calculated position of the chip. Then a region, containing the mark 12 and vernier pattern, is scanned with an electron beam having low incident energy, and he obtained secondary electronic signal is detected by means of an electronic detector 11. The position deviation between the alignment mark 12 and vernier pattern is found from the detected secondary electronic signal, and the position of the chip on the wafer 6 is corrected, based on the found positional deviation. Finally, the alignment exposure of a desired pattern is conducted, based on the corrected position of the chip.
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