| 摘要 |
PROBLEM TO BE SOLVED: To enable to easily correct unbalance of a changing threshold, in the direction of magnetization of memory elements (e.g., deviation of the center of asteroid curve from the original point), without modifying the memory device itself. SOLUTION: An MRAM device 1, in which magnetoresistive memory elements 1 are provided to record information, utilizing the changes in the directions of magnetization of the elements 1, is provided with magnetic field applying means 5 and 6, for providing bias magnetic fields to the elements 1.
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