| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for crystallizing the active layer of a thin-film transistor by applying crystal filtering technique. SOLUTION: The method for crystallizing the active layer of the thin film transistor includes a step (a) of forming an amorphous thin silicon film on a substrate; a step (b) of forming a crystallized source region 60 containing a portion, upon which an MIC source metal is impressed, an active layer region 67, and a filtering channel 63 which connects the regions 60 and 67 to each other by patterning the amorphous thin film silicon film; and a step (c) of crystallizing the regions 60 and 67 by heat-treating the patterned amorphous thin silicon film. The end section of the crystallized source region 60, facing the active layer region 67, is formed in an inclined state with respect to the axis of the crystalline filtering channel 63, which connects the regions 60 and 67 to each other.</p> |
