| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser element of an element structure excellent in light emitting efficiency in a short wavelength range of 375 nm. SOLUTION: In a nitride semiconductor element having an active layer between a first conductivity lower clad layer 13 and a second conductivity upper clad layer 14, first layers 25, 32 having a nitride semiconductor containing Al and In are provided for at least one of the lower clad layer and the upper clad layer. According to this constitution, crystallinity deterioration, especially a layer generating crack can be restrained in an element structure using AlGaN in each clad layer and an optical guide layer. Light confinement of the element can be improved by making a refractive index of a first layer smaller than that of second layers 26, 31 inside a clad layer.
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