| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an IGBT type semiconductor device, having switching characteristics that are close to those of a MOSFET, when the semiconductor device is turned off, and to provide a method for manufacturing the semiconductor device. SOLUTION: A conductive tape 11 is provided, which connects a collector electrode 30 of the semiconductor device 10 to an EQR electrode 34. In this configuration, when a voltage is applied to an emitter electrode film 29 and the collector electrode 30, two kinds of current are produced, thus achieving the IGBT type semiconductor device being closer to the MOSFET; in this case, one current flows via P<+> -type, N<-> -type, and P well layers 21, 22 and 23 respectively, and an N<+> -type diffusion region 24, and the other flow in the EQR electrode 34, a channel stopper region 31, the N<-> -type and P well layers 22 and 23, and the N<+> -type diffusion region 24.</p> |
