| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, wherein a substrate turning to a seed crystal for epitaxial growth is formed by a new manufacturing method, and a semiconductor layer is epitaxially grown on the substrate. SOLUTION: A temporary substrate of single crystal which is composed of first semiconductor material is prepared. A retaining layer composed of second semiconductor material which is different from the first semiconductor material is grown on the surface of the temporary substrate by using a liquid epitaxial growth method. The temporary substrate is eliminated, and the retaining layer is left. A first layer composed of third semiconductor material different from the first semiconductor material is epitaxially grown on the surface of the retaining layer. |
