| 摘要 |
The present invention is directed to a method for planarizing BARC layer in dual damascene process. For forming dual damascene interconnect structure, by use of the present invention, a planar topography of BARC layer is achieved by chemical mechanical polishing. The present invention applies low temperature to bake the coated BARC layer before BARC material cross-links and induces the anti-reflective characteristic. Then, the BARC layer is planarized by chemical mechanical polishing. Next, a high temperature baking of BARC layer is provided before coating the photoresist, so the BARC layer is controlled with minimized variation in surface level and has the antireflective characteristic. Thus, the profile distortion on via and the critical dimension control for via are improved by patterning via on a planar and anti-reflective surface.
|
