发明名称 Chemical mechanical polishing endpoint detection
摘要 The methods and systems described provide for an in-situ endpoint detection for material removal processes such as chemical mechanical processing (CMP) performed on a workpiece. In a preferred embodiment, an optical detection system is used to detect endpoint during the removal of planar conductive layers using CMP. An optically transparent polishing belt provides endpoint detection through any spot on the polishing belt. Once endpoint is detected, a signal can be used to terminate or alter a CMP process that has been previously initiated.
申请公布号 US2002173225(A1) 申请公布日期 2002.11.21
申请号 US20020052475 申请日期 2002.01.17
申请人 WANG YUCHUN;FREY BERNARD M.;BASOL BULENT M. 发明人 WANG YUCHUN;FREY BERNARD M.;BASOL BULENT M.
分类号 B24B21/04;B24B21/08;B24B37/04;B24B47/04;B24B49/16;(IPC1-7):B24B49/00;B24B51/00;B24B1/00 主分类号 B24B21/04
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