| 摘要 |
The disclosed method of measuring the thickness of an active layer of an SOI substrate maintains the accuracy of previous methods but can be performed quickly and during processing of the substrate. The method includes reading data from light reflected from the substrate. A range of light wavelengths for analysis is selected, which avoids the problem of nodes, at which interference between light reflected from different surfaces is weakened. The method determines a relationship between wavelength and reflection intensity and determines peak values of the relationship. The wavelengths corresponding to an arbitrary pair of the peak values, and the number of waves between the peak values, are used to calculate the thickness of the active layer. The method includes an error correction procedure that increases measurement accuracy.
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