Semiconductor emitter element used in semiconductor diode lasers comprises semiconductor layer systems with electrically conducting layers, and a control element for applying voltage pulses between the electrically conducting layers

摘要

Semiconductor emitter element comprises a first semiconductor layer system having a first semiconductor layer (103) and a second semiconductor layer; a second semiconductor layer system having a third semiconductor layer (106); and a control element (108) for applying voltage pulses between the electrically conducting layers. Semiconductor emitter element comprises a first semiconductor layer system having a first semiconductor layer (103) of a first material grown on a first electrically conducting layer and a second semiconductor layer of a second material grown on the first semiconductor layer to form quantum dots (104) in the second semiconductor layer; a second semiconductor layer system having a third semiconductor layer (106) of a third material grown on the first semiconductor layer system with a second electrically conducting layer grown on the third layer; and a control element (108) for applying voltage pulses between the electrically conducting layers. The Fermi level of the first electrically conducting layer agrees with an excited energy level of the quantum dots to produce an electron tunnel through the first semiconductor layer and to prevent a tunnel of electrons through the third semiconductor layer. Independent claims are also included for the following: (a) a process for the production of the semiconductor emitter element; and (b) a process for operating the semiconductor emitter element. Preferred Features: The first material is of formula (I): (where n = 0-1) and the second material is indium arsenide (InAs) or gallium antimonide (GaSb). The third semiconductor layer is aluminum/gallium arsenide (Al/GaAs) super lattice.