TUNABLE STRUCTURE UTILIZING A COMPLIANT SUBSTRATE

摘要

A highly tunable structure (20) can be monolithically integrated upon a monocrystalline semiconductor substrate (22) according to the structure and process described herein. High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline buffer layer (24).