SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PRODUCTION METHOD THEREOF

摘要

A CVD device (100) used for depositing a silicon nitride film, comprising, separated from each other, a hot wall furnace (103) for thermally decomposing a source gas, and a chamber (101) for forming a film on the surface of a wafer (1). The source gas-decomposing hot wall furnace (103) is provided above the chamber (101), with a heater (104) provided around the outer periphery of the furnace (103) capable of setting the interior of the furnace to a high-temperature atmosphere of a maximum of about 1200 DEG C. Source gas supplied to the furnace (103) via piping lines (105), (106) is thermally decomposed in the furnace, and then the decomposed components are supplied onto the stage (102) of the chamber (101) to form a film on the surface of the wafer (1).