发明名称 CONTINUOUS PROCESSING CHAMBER
摘要 <p>A processing system for processing a wafer with a processing vapor is provided. The processing system comprises a chamber, a wafer holder disposed within the chamber for holding the wafer, a drive mechanism for moving the wafer holder through the chamber, and a processing vapor inlet disposed within the chamber for introducing the processing vapor into the chamber and directing the processing vapor onto the wafer. The processing vapor inlet has generally elongate cross-section configured to create a flow of processing vapor with a generally elongate cross-section and to direct the flow onto the wafer surface in an orientation generally perpendicular to the wafer surface, thus causing the formation of a generally linear stagnation zone in the flow of the processing vapor where the flow meets the wafer surface. The processing system may include a first outlet positioned toward the front of the chamber and a second outlet positioned toward the back of the chamber.</p>
申请公布号 WO2002093628(A1) 申请公布日期 2002.11.21
申请号 US2002015730 申请日期 2002.05.16
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