摘要 |
In a method of optical proximity correction, a main pattern is provided. The main pattern has a critical dimension. When the critical dimension is reduced to reach or fall below a first reference value, a serif/hammerhead is added onto the main pattern. When the critical dimension is further reduced to a second reference value or below, an assist feature is added onto the main pattern. The corrected pattern is then transferred to a layer on the wafer with an improved fidelity.
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