发明名称 |
Current driver configuration for MRAM |
摘要 |
A current driver configuration for MRAMs includes word-line drivers and bit-line drivers at respective first ends of word lines and bit lines. The word line drivers and the bit line drivers each include a series circuit formed by an n-channel field-effect transistor and a current source. Further series circuits are provided at the respective second ends of the word lines and the bit lines. Each of the further series circuits includes a second n-channel field-effect transistor and a voltage source.
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申请公布号 |
US6483768(B2) |
申请公布日期 |
2002.11.19 |
申请号 |
US20010898221 |
申请日期 |
2001.07.03 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BOEHM THOMAS;GOGL DIETMAR;MUELLER GERHARD;ROEHR THOMAS |
分类号 |
G11C11/14;G11C7/12;G11C11/15;G11C11/16;H01L21/8246;H01L27/10;H01L27/105;H01L43/08;(IPC1-7):G11C8/00 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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