发明名称 Current driver configuration for MRAM
摘要 A current driver configuration for MRAMs includes word-line drivers and bit-line drivers at respective first ends of word lines and bit lines. The word line drivers and the bit line drivers each include a series circuit formed by an n-channel field-effect transistor and a current source. Further series circuits are provided at the respective second ends of the word lines and the bit lines. Each of the further series circuits includes a second n-channel field-effect transistor and a voltage source.
申请公布号 US6483768(B2) 申请公布日期 2002.11.19
申请号 US20010898221 申请日期 2001.07.03
申请人 INFINEON TECHNOLOGIES AG 发明人 BOEHM THOMAS;GOGL DIETMAR;MUELLER GERHARD;ROEHR THOMAS
分类号 G11C11/14;G11C7/12;G11C11/15;G11C11/16;H01L21/8246;H01L27/10;H01L27/105;H01L43/08;(IPC1-7):G11C8/00 主分类号 G11C11/14
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