Metal organic chemical vapor deposition method and apparatus

摘要

In a metal organic chemical vapor deposition method, a parameter convertible into the number of moles of gas of an organometallic source supplied from at least one source vessel is detected. A source contained in the source vessel is heated when the parameter becomes smaller than a minimum value necessary for forming a thin film of a metal constituting the organometallic source on a substrate in a reactor. The gas of the organometallic source is quantitatively supplied to the reactor, thereby forming the thin film on the substrate. A metal organic chemical vapor deposition apparatus is also disclosed.