| 摘要 |
A lower electrode (4), a dielectric layer (5) made of a ferroelectric material or a high dielectric constant material, and an upper electrode (6) are formed in order on an insulating film (2). The dielectric layer (5) is formed to extend off the lower electrode (4). Between the portion of the dielectric layer (5) at which the dielectric layer is extending off the lower electrode and the insulating film (2), an insulation barrier layer (3) made of a composite metallic oxide including at least two metals containing a Si or a silicon nitride compound is interposed. In another mode, a plug for contact is provided in an insulating film, and an adhesion layer is provided between the plug and the lower electrode. An insulation barrier layer made of an oxide of the same material forming the adhesion layer is provided between the dielectric layer and the insulating film. As a result, Ti and Pb, which are constitutive elements of the ferroelectric material or high dielectric constant material do not diffuse and enter into an SiO2 film and a semiconductor layer, enabling easy formation of a barrier layer.
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