| 摘要 |
A method of etching a platinum electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.3 mum and having a platinum profile equal to or greater than about 85°. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the platinum electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising chlorine, argon and a gas selected from the group consisting of BCl3, HBr, and mixtures thereof. A semiconductor device having a substrate and a plurality of platinum electrodes supported by the substrate. The platinum electrodes have a dimension (e.g., a width) which include a value equal to or less than about 0.3 mum and a platinum profile equal to or greater than about 85°.
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