发明名称 Layout for measurement of overlay error
摘要 In the manufacture of a multi-lay integrated circuit, a reference target is etched into a test wafer along with circuit features of a reference layer. As successive dependent layers are printed, successive dependent targets overlaying the same reference target are formed in photoresist. As each successive dependent target is printed, the degree to which it is registered with the reference target is used to determine the overlay error. After determination of overlay error for a layer, the layer's dependent target is removed, allowing the reference target to be matched with the dependent target of another layer.
申请公布号 US6484060(B1) 申请公布日期 2002.11.19
申请号 US20000533785 申请日期 2000.03.24
申请人 MICRON TECHNOLOGY, INC. 发明人 BALUSWAMY PARY;BOSSART TIM H.
分类号 G03F7/20;H01L23/544;(IPC1-7):H01L21/66 主分类号 G03F7/20
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