| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for crystallization of a semiconductor film by which a throughput and the degree of crystallization can be enhanced and also provide a method for manufacturing an active matrix substrate using the semiconductor film. SOLUTION: In an annealing process for crystallizing an amorphous silicon film 30 formed on the surface of a substrate 20, laser light LA is cast on the silicon film 30. An arc lamp 91 and a reflector 92, which are used for rapid heat treatment, are directed toward the laser light LA-cast region of the silicon film 30. At that time, the region cast by the lamp light LC emitted by the arc lamp 91 and the laser light LA-cast region should overlap each other. Under this condition, the silicon film 30 is annealed with the substrate 20 being moved in the direction shown by an arrow Y1.</p> |
