| 摘要 |
The use of single doping type and/or intrinsic silicon in realization of Schottky barrier junction based single device inverting and single device non-inverting systems which demonstrate operational characteristics similar to multiple device (CMOS) systems, is disclosed. Variations of said single device inverting and single device non-inverting systems can be operated as modulators, nonlatching (SCR's) and/or gate voltage controlled direction of rectification devices. Source Coupled Regeneratively Switching Schottky barrier CMOS device systems comprising seriesed N-Channel and P-Channel MOSFETS, are also disclosed. Self-delineating device fabrication procedures for realizing Schottky barrier MOSFETS with leakage current limiting Schottky barrier junctions only at the ends of semiconductor channel regions, are further disclosed. Presented are experimentally obtained results which demonstrate operational characteristics of P and N-Channel Schottky barrier MOSFET devices fabricated by a disclosed fabrication procedure in which chromium was used as a Schottky barrier silicide forming metal. The present invention promises to increase packing density in CMOS circuitry by at least one-third and offers increased speed of operation inherrant with Schottky barrier junctions.
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