发明名称 |
Silicon-on-insulator transistors with asymmetric source/drain junctions formed by angled germanium implantation |
摘要 |
A silicon-on-insulator (SOI) transistor. The SOI transistor includes a germanium implanted source and drain having a body disposed therebetween, and a gate disposed on the body, the germanium being implanted at an angle such that the source has a concentration of germanium at a source/body junction and the gate shields germanium implantation in the drain adjacent a drain/body junction resulting in a graduated drain/body junction. Also disclosed is a method of fabricating the SOI transistor.
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申请公布号 |
US6479868(B1) |
申请公布日期 |
2002.11.12 |
申请号 |
US20010845659 |
申请日期 |
2001.04.30 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
AN XILIN JUDY;YU BIN;RICCOBENE CONCETTA E. |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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