发明名称 |
Method of making memory wordline hard mask extension |
摘要 |
A manufacturing method is provided for an integrated circuit memory with closely spaced wordlines formed by using hard mask extensions. A charge-trapping dielectric material is deposited over a semiconductor substrate and first and second bitlines are formed therein. A wordline material and a hard mask material are deposited over the wordline material. A photoresist material is deposited over the hard mask material and is processed to form a patterned photoresist material. The hard mask material is processed using the patterned photoresist material to form a patterned hard mask material. The patterned photoresist is then removed. A hard mask extension material is deposited over the wordline material and is processed to form a hard mask extension. The wordline material is processed using the patterned hard mask material and the hard mask extension to form a wordline, and the patterned hard mask material and the hard mask extension are then removed.
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申请公布号 |
US6479348(B1) |
申请公布日期 |
2002.11.12 |
申请号 |
US20020109516 |
申请日期 |
2002.03.27 |
申请人 |
ADVANCED MICRO DEVICES, INC.;FUJITSU LIMITED |
发明人 |
KAMAL TAZRIEN;NGO MINH VAN;RAMSBEY MARK T.;SHIELDS JEFFREY;YANG JEAN Y.;LINGUNIS EMMANUIL;SHIRAIWA HIDEHIKO;HUI ANGELA T. |
分类号 |
H01L23/52;H01L21/3205;H01L21/8246;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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