| 摘要 |
A semiconductor device is provided that is resistant to electrostatic breakdown by forming active elements for enhancing the protection capability by utilizing a guard ring. A circuit formation region is allocated on one surface of a one-chip substrate. Internal circuits, each surrounded by an associated guard ring are provided in the circuit formation region, and external connection terminals are provided outside the internal circuits. The internal circuits are connected to some of the external connection terminals and power lines. Each of the active elements, which become conductive when a voltage on one of the power lines exceeds a proper operating voltage of the internal circuit, is formed parasitic to the guard ring.
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