发明名称 Redundant circuit for memory device
摘要 A redundant circuit that includes a combination of fuses and anti-fuses, and which may be used during various phases of the manufacturing process (e.g., during wafer test or final test) to replace a defective circuit. The redundant circuit includes (1) a replacement circuit (e.g., a redundant memory cell) that is configurable to replace a defective circuit, and (2) supporting circuitry for the replacement circuit. The support circuit is configurable to provide a control signal (e.g., to activate a word line) for the replacement circuit and further includes at least one fuse and at least one anti-fuse. The fuses or anti-fuses may be programmed to provide a programmed value (e.g., a programmed address) for the replacement circuit. The redundant circuit can be efficiently fabricated within a memory device, and may also be used for other circuits and applications.
申请公布号 US6480428(B2) 申请公布日期 2002.11.12
申请号 US20000740712 申请日期 2000.12.19
申请人 WINBOND ELECTRONICS CORPORATION 发明人 ZHENG HUA;KIM JAE-HYEONG
分类号 G11C17/18;G11C29/00;(IPC1-7):G11C7/00 主分类号 G11C17/18
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