| 摘要 |
1,149,537. Semi-conductor devices. MOTOROLA Inc. 16 Aug., 1966 [22 Oct., 1965], No. 36656/66. Heading H1K. A temperature compensated Zener diode, consisting of a Zener junction with a second junction in series opposition in a single wafer, comprises a substrate of one conductivity type on which is located an epitaxial layer of the opposite conductivity type having a first annular region bridged by an alloy layer both of the first conductivity type and surrounded by a second annular region of the first conductivity type extending to the substrate and a passivating layer overlying the outer periphery of the first annular region. As shown, Figs. 3 and 5, a plurality of devices are produced by epitaxially depositing an N-type silicon layer 12 on a P- type substrate 11, covering the surface of layer 12 with a layer of silicon oxide produced by thermal oxidation or pyrolytic decomposition, photomasking and etching and diffusing-in boron to form P-type region 16 which divides layer 12 into a plurality of islands. An annular P-type region 19 is produced in each island by a second diffusion and the central portion of the oxide mask 13 together with an annular strip overlying the annular P-type region 16 is then removed and a layer of aluminium is deposited over the wafer, masked and etched and alloyed in a nitrogen atmosphere to produce P-type layer 21 and an ohmic contact to region 16. The wafer is then diced and contacts applied.
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