| 发明名称 |
FERROELECTRIC SEMICONDUCTOR MEMORY AND ITS MANUFACTURING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric random-access memory where fatigue characteristics and deterioration and reliability are improved. SOLUTION: The ferroelectric random-access memory of the present invention has a ferroelectric capacitor formed by laminating a lower electrode, a PZT film and an upper electrode including SrRuO3 , and the PZT film includes pinholes at densities of less than or equal to about 17 holes/μm<2> .
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| 申请公布号 |
JP2002324897(A) |
申请公布日期 |
2002.11.08 |
| 申请号 |
JP20020052230 |
申请日期 |
2002.02.27 |
| 申请人 |
FUJITSU LTD |
发明人 |
OZAWA SOICHIRO;SHAN SAN;NOSHIRO HIDEYUKI;HICKERT GEORGE;MATSUURA KATSUYOSHI;CHU FAN;SAITO TAKEYASU |
| 分类号 |
H01L21/02;H01L21/316;H01L21/8246;H01L27/105;H01L27/115;(IPC1-7):H01L27/105 |
主分类号 |
H01L21/02 |
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