发明名称 APPARATUS AND METHOD FOR MEASUREMENT
摘要 <p>PROBLEM TO BE SOLVED: To provide a temperature compensation method in a flow-rate measuring apparatus of a type which measures flow rate, by evaluating a response characteristic with reference to pulse-shaped heating operation, when temperature compensation becomes a problem in the measurement of the flow rate. SOLUTION: The pulse-shaped heating operation is performed to a thin-film material, whose heat conductivity is high such as a diamond thin film or the like, and the response characteristic at this time is measured as a change in the temperature of the thin film. The response characteristic reflects the thermal influence, to which the thin-film material is subjected from the circumference, and it depends on, e.g. the flow rate of a fluid. A sensor which obtains an output depending on the fluid and the temperature of the fluid and a sensor which obtains an output corresponding to the temperature of the fluid are prepared, and an output which does not depend on the temperature and which precisely reflects the flow rate is obtained.</p>
申请公布号 JP2002323464(A) 申请公布日期 2002.11.08
申请号 JP20020030697 申请日期 2002.02.07
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 RIMANTAS BAITOKUS
分类号 G01P5/10;G01F1/684;G01N25/18;(IPC1-7):G01N25/18 主分类号 G01P5/10
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