| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing electron emission devices, which can surely form a carbonaceous thin film on a required portion of a metal layer or a cathode electrode even at a relatively low temperature. SOLUTION: This manufacturing method comprises a process for forming a cathode electrode 11, an insulation layer 12, and a gate electrode 13 having an opening 14A on a support body 10, a process for forming a second opening 14B in the insulation layer 12, communicating with the opening 14A, a process for forming a carbonaceous thin film selectively grown region 20 consisting of a complex compound layer 22 by the reaction between the surface of the cathode electrode 11 and an organic solvent on a portion of the cathode electrode 11 located on the bottom part of the second opening 14B, and a process for forming an electron emission part 15 consisting of the carbonaceous thin film 23 on the carbonaceous thin film selectively grown region 20.</p> |
