| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device in which no cracks occur even if an external force is applied to a pad portion, and erosion due to tungsten CMP does not occur, and to provide a method of manufacturing the same. SOLUTION: This method includes the steps of forming a first pad 2a on a base plate 1; forming a depressed pad opening 4a in an insulating film layer 3 so that almost the whole area of the first pad 2a is exposed after forming the first pad 2 on the base plate 1; forming a first barrier metal layer 5 on the first pad 2a and the insulating layer 3 along the depressed shape of the pad opening 4a; forming a plug layer 6 on the first barrier metal layer 5; polishing the plug layer 6 and the first barrier metal layer 5 by CMP to expose the insulating film layer 3 and leave the plug layer 6 in the pad opening 4a; forming a second barrier metal layer 8a on the plug layer 6; and forming a second pad 9a on the second barrier metal layer 8a.</p> |
