THIN-FILM TRANSISTOR AND METHOD OF FORMING THE SAME

摘要

PROBLEM TO BE SOLVED: To prevent electric corrosion caused by contact of a pixel electrode and a drain electrode without increasing the number of processes, in a thin-film transistor wherein Al or Al alloy is included in the uppermost layer of the drain electrode and the pixel electrode is constituted of ITO. SOLUTION: The thin-film transistor comprises an electrode 105b for contact formed on the same layer as a gate electrode 105a, a passivation film 109 formed on the drain electrode, and a contact hole 109b extended from the uppermost surface of a flattening film 110 to the electrode for contact. The electrode for contact is connected to the drain region of a semiconductor layer via the drain electrode. The pixel electrode 11 formed on the flattened film is connected to the electrode for contact through the contact hole.