发明名称 Semiconductor device
摘要 A boosted voltage generation circuit stops the voltage boosting operation immediately after the oscillation activation signal of the oscillator generating a plurality of phase shifted clock signals has been inactivated so as to suppress the increase in the output current of the voltage boosting circuit and dependence of the boosted voltage on the power supply voltage. The boost voltage generation circuit comprises a clock signal generating circuit generating a plurality of phase shifted clock signals, a voltage boosting circuit supplied with a plurality of boost-driving clock signals for generating a boosted voltage higher than the power supply voltage, and a clock signal control circuit serving to transfer the clock output of the clock signal generating circuit when the detected signal has a first logic state, and serving to hold the logic state of the voltage boosting clock signal when the detected signal has a second logic state.
申请公布号 US2002163836(A1) 申请公布日期 2002.11.07
申请号 US20020180083 申请日期 2002.06.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TANZAWA TORU
分类号 G11C16/06;G11C5/14;G11C11/407;G11C16/30;H01L21/822;H01L27/04;H02M3/07;H03K5/15;(IPC1-7):G11C11/34 主分类号 G11C16/06
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