| 摘要 |
A capacitor in which a generation of a bad storage node can be reduced and a method of manufacturing the same. An opening is formed at a portion of an insulating layer on a semiconductor substrate for exposing a conductive structure under the insulating layer. A polysilicon film is formed on a top surface of the insulating layer and a sidewall and a bottom surface of the opening. A supporting film is formed on the polysilicon film. The polysilicon film and the supporting film are partially etched so that the polysilicon film and the supporting film remain only on the sidewall and the bottom surface of the opening, thereby forming a storage electrode. A dielectric film and a plate electrode are formed on the storage electrode. The generation of a bad capacitor can be reduced by using the supporting film to keep the node of the storage electrode from being inclined.
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