发明名称 |
Method for forming a silicon dioxide-low k dielectric stack |
摘要 |
A method for forming silicon dioxide-low k dielectric stack is provided. The present invention is characterized in that applying H2 plasma on a low k dielectric layer formed on a conductive interconnect layer to cover dangling bonds on the surface of the low k dielectric layer. Thereby, preventing the reaction between the low k dielectric layer and oxygen gas employed in a subsequent process for forming a cap layer of silicon dioxide occurring, and thus prohibiting oxygen gas damaging the low k dielectric layer.
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申请公布号 |
US2002164868(A1) |
申请公布日期 |
2002.11.07 |
申请号 |
US20010847087 |
申请日期 |
2001.05.02 |
申请人 |
CHANG TING-CHANG;LIU PO-TSUN;MOR YI-SHIEN |
发明人 |
CHANG TING-CHANG;LIU PO-TSUN;MOR YI-SHIEN |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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